Abstract
With the suggestion of SoP to reduce cost and create additional value, the memory which is fabricated on glass substrate is essential for peripheral driver ICs application. We have found and studied a simple twins poly-Si TFTs EEPROM’s to suit the low temperature and simple process on glass substrate. First, we actually fabricated the simple twins poly-Si TFTs EEPROM’s and examined the feasibility of it. We successfully made it and that has good memory characteristic. The memory also exhibited that higher area ratio in coupling cell results in bigger on-current of devices and the better programming/erasing efficiency, the results of experiment were agreed with previous report. And than we present a concept of enhancing this memory cell performance by increasing the overlap of the source/drain and gate in coupling cell and realize it. In addition, the influence of different S/D dopant type in active cell was investigated, the N-type S/D dopant have batter memory efficiency than P-type S/D dopant.