Abstract
The proposition of this thesis is an empirical leakage current model of polysilicon thin film transistor. In this model, we used a modified SRH equation and introduce an empirical electrical field to calculate the electrical field near the drain side. Firstly, we used Dimitriadis’s method to calculate the density of state in the band gap, and then combined with a modified SRH equation. This modified SRH equation can consider the phonon-assisted tunneling combined the Poole-Frenkel effect and offer more physical-insight to the leakage current model. Finally, to introduce an empirical electrical field to estimate electrical field near the drain side. There is only one fitting parameter in the empirical electrical field to reduce the artificial interference. Good agreements are found when comparing the simulated results with experimental results. And discuss the different influences for leakage current between the density of state in the band gap and electrical field near the drain side.