Abstract
Ag-In-Sb-Te alloy films have been widely used due to their useful application as a recording material for phase change optical disks. The films were prepared by magnetron sputtering of AgInSbTe target in the presence of Argon gas. Effects of deposition method of AgInSbTe films on disk quality have not been reported yet. In this study, we found that the AgInSbTe films deposited by RF magnetron sputtering have higher index of refraction, higher absorption coefficient, higher density, less vacancies, fewer Ar gas, and better film surface flatness than that deposited by DC magnetron sputtering. Under the write/erase speed of CD-4X, the recording layer deposited by RF magnetron sputtering has higher erasibility and wider suitable write/erase power range than that deposited by DC magnetron sputtering. In this study, the CNR value of disk sputtered by RF magnetron sputtering method is 57.9dB, and the erasibility is 25.5 dB.