Abstract
在此論文, 我們模擬關於半導體超晶格電子結構之掃描穿隧能譜的研究.從每層超晶格之態 密度, 計算穿隧電流與電壓的特性. 我們以第二類InAs/GaSb超晶格來說明我們的方法, 並與實驗比較.In this thesis we model cross-sectional scanning tunnelingspectroscopy studies of semiconductor superlattice electronicstructures by computing tunneling current-voltagecharacteristics from calculated superlattice layer-local densityof states. We demonstrate our approach for a type-II InAs/GaSbsuperlattice, and compare it with known experimental data.