Abstract
Abstract Phosphoric acid and boric acid were used as low cost, nontoxic n-type and p-type doping sources for silicon solar cells. In this research, we coated dilute phosphoric acid and boric acid on silicon wafer by ultrasonic spray coating method without any additional complicated vacuum system. Furthermore, a designed pattern diffusion area can be obtained by using an easily removed mask. After these two acids spraying on, the n-type and p-type patterned area can be driven-in at just one annealing process in air. The sheet resistance of the n-type and p-type doping area can be controlled by spraying time and annealing temperature. In phosphorus doping, sheet resistance ranging from 28 to 125Ω/□ were achieved. In boron doping, sheet resistance from 30 to 125Ω/□ could be acquired. The n-type and p-type doping fabrication process by low cost ultrasonic spray method can be used for Interdigitated-Back-Contact (IBC) solar cells application.