Abstract
AbstractIn this thesis, thin film transistor was fabricated on the soft plastic substrate with low temperature. First, we deposited Parylene C at room temperature as gas barrier and dielectric layer. Secondly, we spun coating P3HT as organic semiconductor layer. Finally, we deposited both source and drain electrodes defined by our self-made silicon shadow mask. After fabricating the transistor, I-V characteristic were measured, the degradation study was also investigated.As a result of this experiment, Parylene C had not only distinctly isolated the air but also reduced the surface roughness of the plastic base plate. From electrical measurement, Parylene C is a good insulating material. Titanium was deposited as adhesion layer and solved the adhesion problem for Parylene C and aluminum. For The pattern defining, shadow mask was developed. Two different specimen of P3HT were then spun on the Parylene C. The as-deposited sample showed the mobility 1.8×10-4cm2/v-s. The sample with annealing processes at temperature 80oC for 2 hours improved the mobility about 8.8×10-4 cm2/v-s. So did the Ion/Ioff ratio. The transistor with gate length of 8μm were then completed. I-V characteristic of the degradation of P3HT transistor was also studied after various air-exposure time 30 minutes to 14 days. It might related to the absorption of the oxygen or water in thin film P3HT.