Abstract
在此論文中,主要是研製不同結構的矽微條探測器,並比較其在照射鈷60 前後漏電流的變化。在每片矽晶片上製作四個相同面積(1.5*3.0平方公 分)的矽微條探測器；其P型微條間距為50微米,而其讀出間距為100微米。 我們在P型微條上長 一層O-N-O做為耦合電容之閘極氧化層,並改變P型微 條和背面N型層的離子佈植濃度,以及金屬覆蓋的面積。然後將這些製作完 成的矽微條探測器送至清華大學原科中心照射鈷60,比較其照射前後漏電 流的變化。由此研究可提供一些資料作為將來製造高抗輻射率的矽微條探 測器。 In this thesis, we have developed several kinds of Silicon Microstrip Detectors (SMD),and compared the changes of the leakage current of the detectors at pre-irradiated and post- irradiated of Co60. Four SMD, each with area of 1.5*3.0 cm2, were fabricated on a silicon wafer with diameter of 100 mm. The pitch of P+-strip of the SMD is 50 mm and the readout pitch is 100 mm. The O-N-O layers were grown above the P+-strips as the gate oxideof the coupled capacitors. A couple of dosages of ion implantation on the P+-strips and the N+ layers, and the different metal areas above the p+-strips were used to fabricate the four SMD. Then the SMD were irradiated by 60Co at the Institute of Nuclear Science inNational Tsing Hua University . The information from this study may offer a clue in the future, to make a good radiation-hard silicon microstrip detector.