Abstract
Abstract In this thesis, we apply reversal imprint technology into the fabrication process of organic thin-film-transistor. First, we sputter bottom gate metal on Si wafer, then evaporate parylene C as dielectric layer and spin coating P3HT as organic active layer. Finally, define S/D pattern by imprint metal on P3HT layer. We will discuss the factors that influence imprint results, including surface treatment, and parameters of the imprint process. As the result of this experiment, sputtering Ti as adhesion layer between S/D gold contact and P3HT layer can improve imprint result. Also, pre-coating F13TCS on mold and O2 plasma treatment on P3HT layer can improve the imprint yield, too. At last, we can scale down the channel length to 2um by the mold that made with traditional lithography technology. Because O2 will induce raise of P3HT doping concentration and increase the conductivity, transistors on the sample with O2 plasma have leakage current about 1.3×10-10A/um, and Id-Vd characteristics is nearly like a resistor. As we take off the O2 plasma process and reduce the imprint temperature due to match up operation temperature of P3HT, the leakage current can cut down to 1.2×10-12A/um, and Vth is about 20V；mobility is 2.2×10-4cm2/V-s and Ion/Ioff ratio is 1000. Also, the Id-Vd characteristics is obviously improved. But under this imprint condition, the yield of imprint pattern is poor.