Abstract
The stress behaviors of the periodic lines structure with Ti and TiN deposited on SiO2 lines has been investigated by in-situ curvature measurement system. The stress-temperature curves are dominated by the SiO2 lines which are the primary parts in the whole structures, and the curves also present the influences of Ti and TiN, like the compressive stresses from oxygen-absorbing of Ti layers and the change toward tensile stress by stress relaxation in TiN layers. The effects from Ti and TiN are dependent on the linewidth of the structures because the vertical side walls can relax the stresses. The changes of the stresses due to Ti and TiN are larger in structures with larger linewidth because the number of side walls is fewer when the linewidth of the structure is larger. The structures with thicker TiN have smaller thermal stress due to its higher coefficient of thermal expansion decrease the differences between the line-like SiO2 layer and the substrate.