Abstract
This article focuses on the bending strength of single crystal Silicon. The bending strength of single crystal silicon was improved by using a Nanostructured strengthening method, but the mechanism of nanistructured strengthening is still unclear. Micro-Raman spectroscopy can be used to detect the micro-scale stress distribution of nanostructured Si. Therefore, the purpose of this dissertation is to resolve the mechanism of strengthening by Micro-Raman spectroscopy. Two Raman results were showed in this dissertation, Firstly, the Raman shift was positively proportional to the applied loading force. The maximum loading force applied on the nanostructured sample was larger than the maximum loading force of the polished sample. Secondly, a Raman mapping on the micro-scale stress distribution of Si under the 4-point-bending test shows linear relations in the uniform stress region and also the non-uniform stress region. It means that mechanical behavior of the Si sample doesn’t change with the nanostructure. It is clear that the bulk of Si is the main loading region. Based onthe experimental results, we can conclude that the initial defects and the stress concentration can be restrained by the nanostructure.