Abstract
The metal organic chemical vapor deposition ( MOCVD ) of several cerium-based oxides has been studied in order to prepare buffer layers tailored to the epitaxial growth of oxide. Due to the similarity of the crystal structure and the lattice constant of CeO2 to those of Si, there have been many attempts to grow single crystal epitaxial layers of CeO2 on Si substrate in order to realized a silicon-on-insulation ( SOI ) structure by deposition methods. It has been shown that ceria-based oxide film with a sufficiently wide variation of lattice constant could be prepared. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 : La thin film had a column texture of polycrystal structure. The crystallinity and orientation were characterized by X-Ray diffraction (XRD). The film was polycrystalline and preferentially orientated to the <100> direction. Annealing at 1000℃ in O2 atmosphere for 30 min. increased the thickness of SiO2 between CeO2 : La thin film and Si substrate.