Abstract
In this research, we used chemical vapor deposition to synthesize monolayer MoS2. Sulfurization and tellurization was used to synthesize scalable size of MoS2、MoTe2 by sulfurizing or tellurizing pre-deposited MoO3 on the substrate.The influence of growth parameters was investigated, such as concentration of precursor vapor、growth temperature and pressure, trying to realize scalable synthesis of two-dimensional semiconductor. The advantages of sulfurization and tellurization were its high uniformity、good controbility. But the mobilities of MoS2 synthesized by Sulfurization were relatively low compared to MoS2 synthesized by chemical vapor deposition.