Abstract
This thesis studies two novel structures that have low forward voltages—quasi-vertical IGBT and JBS diode. In addition, by incorporating the quasi-vertical design, the proposed devices are able to be integrated with other devices, very suitable in the application of power ICs. The devices were first designed using the simulator MEDICI and then taped-out using HV_0.5μm_5/100V_1P3M process. The simulation and measurement results indicate that the V-IGBTs with P-Sinker design have better forward capability than that of L-IGBT and VDMOS. At room temperature as well as at elevated temperatures, the proposed JBS diodes have lower forward voltage than that of the PN diodes in the same fabrication process. In terms of the turn-off time, it takes 200 ns for the fast JBS diodes to turn off, only half of the time required by the PN diodes.