Abstract
Abstract The Ta2O5 films are deposited by plasma enhanced chemical vapor deposition system. The C-V, ID-VD and ID–VG characteristics are measured. The electron mobility obtained from gm plot was 333 cm2/V·s at VG=0.35V. The subthreshold swing was 73 mV/dec. The gate transport mechanism is dominated by Schottky emission at higher field(Eox>1MV/cm).The gate current is dependent on the electron concentration in the inversion layer at lower field(Eox=0.6~1.3MV/cm). The emssion probability is a strong function of gate voltage and the oxide-trapped charge density(nOT) increases with the magnitude of emitter bias.