Abstract
Metal-ferroelectric-insulator-semiconductor field effect transistors (MFISFETs) using an Al/Pb(Zr0.53,Ti0.47)O3 (PZT)/HfO2/Si structure were successfully fabricated. The threshold voltage is 1.51 V and the electron mobility is 20 cm2/V-s. The gate current density is 3x10-5 A/cm2 at 500 kV/cm. The IDS-VGS characteristics depend on both the polarization of the PZT layer and the injected charges into the insulator layer. When the polarization effect is dominant, the memory window is 0.25 V at an applied gate voltage of 4 V. The drain current can be controlled by a poling voltage indicating memory effect.