Abstract
N-channel metal-ferroelectric-insulator-semiconductor Field Effect Transistors (MFIS-FET) with a Al /PZT /SiO2 /Si structure were fabricated . The PZT films were deposited by RF magnetron sputtering . Separate metal/Pb(Zr0.53Ti0.47)O3 /metal capacitors were used to characterize the ferroelectric properties. The PZT films showed a remanent polarization (Pr) of 5.9 μC/cm2 and a coercive electric field of 23.2 kV/cm . The drain current-gate voltage (ID-VG) characteristics of the MFIS-FET showed a memory window of about 0.864 V. The nonvolatile memory operation of the MFIS-FET was demonstrated by observing the drain current (ID) controlled by previously applied write voltages . N-channel metal-gate MFIS-FETs with a Al/PZT/SiO2/Si structures were fabricated. The electrical properties of the MFISFETs were characterized . A ID-VG hysteresis loop was observed for the PZT/SiO2/Si MFIS-FETs . The memory windows of the MFIS-FETs in the linear region is 0.864V (VD=0.1 V) and 0.953V in the saturation region (VD=1V). The nonvolatile memory operation of the MFIS-FETs is shown by the dependence of the drain current ( ID ) on the previously applied write voltage on the gate. The electron mobility of the Al/ PZT/SiO2/Si MFIS-FET is about 270 cm2/V-s. An ac fatigue test using bipolar square pulses was also performed on the MFIS-FETs. It is shown that the MFIS-FETs can be operated up to 108 fatigue cycles.