Abstract
We reported MOS characteristics of TiN metal gate electrode on ultra-thin gate dielectrics and investigated Si3N4 stress with TiN gate, breakdown voltage, gate leakage current and gate sheet resistance, which compared with SiO2. We also found the soft breakdown phenomenon occurred in TiN gate with Si3N4 dielectric and it was reported only in poly gate with oxide previously. These results demonstrate for the first time that TiN used as gate electrode and Si3N4 as gate dielectrics, contrary to those conclusions made previously on poly gate with oxide.