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金氧半元件中高介電與界面層之退火與在原位電漿處理的電與材料特性研究
Thesis

金氧半元件中高介電與界面層之退火與在原位電漿處理的電與材料特性研究

謝宗林
Masters, 國立清華大學, 工程與系統科學系
2012

Abstract

金氧半 高介電層 電漿 界面
My research thesis is about "Annealing and In-situ Plasma Treatment of Interfacial Layer/High-k Dielectric on Electrical and Material Characteristics in MOSFET Devices". Therefore my research focus on different treatment for interfacial layer and HK dielectric.

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