Abstract
A new method of extracting effective channel length (Leff) and source-and-drain series resistance (RSD) is proposed. The method bases on I-V measurement and drain current equation. Since Leff and RSD were considered to be gate-voltage-dependent, this new method bases on this assumption and can be used to extract Leff and RSD at different gate-overdrive-voltages (Vgs - Vt). Extracting through our method, we find that Leff increases with the increase of gate-overdrive-voltage and RSD decreases with the increase of gate-overdrive-voltage. When comparing with "paired-Vg-method", our extracting results almost agree with that of paired-Vg-method, and we prove that it is always true. Furthermore, we get an error term through our method. The error term is included in our method and "paired-Vg-method", but only can be seen through our method. Finally, we use the error term to explain how the temperature affect the experiment result and show that the "real" Leff is almost independent of temperature, at least, from T=25℃ to 150℃.