Abstract
Abstract In this work, the I-V and C-V characteristics of Au/BST/Pt(MIM) and Au/BST/p-(100)Si/Au(MIS) capacitors are investigated. The BST thin filming. And perovskite phase was confirmed by X-Ray Diffraction spectra. The dielectric constant of 150nm-thick film is around 105 at 10kHz ands are deposited by magnetron control RF sputtering with in-situ anneal decreases gradually with increasing frequency. The leakage current is around 10-7 A/cm2 in the range of 0~3 V and increases rapidly with increasing temperature. By the way, the I-V and C-V characteristics of MIS capacitors are discussed. The conduction current mechanism at different temperature is also studied. For MIM structure, Schottky Emission is dominant in the temperature range from 300K to 400K with barrier height 0.78~ 0.83 eV. For MIS structure, the conduction current is dominant by Schottky Emission at room temperaure when the device is negative biased (operated in accumulation region). With increasing temperature, the Poole-Frenkel current component is getting larger.