Abstract
The E-Beam lithography combined with replacement method can be used to fabricate copper nanowires. The copper nanowires were then transferred onto parylene/polyimde substrate. The roughness and electrical characteristic of the copper nanowires were compared with that of the transferred copper nanowires. Meanwhile, intergrated copper nanowire with electrical pad by using metal mask, then performed electrical measurement characteristic on probe station.First at all, the nano trench was defined by e-beam lithography on α-Si(400□)/Si3N4(500□)/Si. And the copper nanowires were formed by replacement method. The plating solution were 3g cupric sulfate (CuSO4•5H2O) with 70cc HF/L. We can obtained the copper nanowires with width 110nm, height 80nm. The copper nanowire were then successfully transfer onto parylene/polyimde substrate with imprinting pressure 500psi, temperature 150℃ and imprinting pressure 400psi, temperature 150℃. The difference of surface roughness and electrical characteristic between copper nanowires and the transferred copper nanowires were also compared. We obtained the resistivity of nanowires by C-AFM. The resistivity of copper nanaowires is 1.01 X10-5 Ω-cm and the resistivity of transferred copper nanaowires is 2.14~4.01 X10-5 Ω-cm. The adhesion of cooper nanowires and transferred cooper nanowires were also tested by 3M. The transferred cooper nanowires which imprint temperature is 180℃ can pass the 3M test. In order to reduce the electrical measurement error of contact resistance by C-AFM, we developed the technique of copper nanowire integrated metal pad mask, then measured electrical characteristic on probe station. The resistivity of this method is 7.24 X10-6 Ω-cm.