Abstract
The experiment mixed La2O3 and CuO to make a series of targets with different composition.Useing Rf sputter system to deposite and characterize LaCuO3 thin film in different condition (deposition temperature、Ar/O2、work pressure and annealing temperature), and to investigate the property of Pt/LCO/Pt and Pt/LNO/LCO/Pt. The LaCuO3 thin film was amophous as-deposited, and its resistivity was very high.The film contained each phase after annealed.It's the defect perovskite series LaCuO3-y, and its resistivity is 23.515 m ohm-cm.The current of Pt/LCO/Pt device increased after annealed under 400C/10min.The current conducting mechanism is Space Charge Limited Current before and after annealed between 1.0V and 1.5V of foward and reverse bias.The current conducting mechanism is Poole-Frenkel Emission before and after annealed between 0.27V and 0.64V of foward and reverse bias.The current of Pt/LNO/LCO/Pt device after annealed is far large than before annealed, and the current didn't have clear change after annealed.We can't find out single current conducting mechanism ater annealed.