Abstract
The Sb2Te3 alloy system has been studied for several years because it can be used as the erasable optical recording medium. The applications of this system has been focus for others groups. We studied the effect of the strong electron-electron interaction by doping Ag in this system, i.e. (Sb2Te3) i-xAgx, l%~21% for x. We found that the enhanced electron-electron interaction between x=0.13~0.21 for the temperature interval 2K-IOK. There are two quantitative effects for transport when the electrons are all in random state: (1) Enhanced electron-electron interaction (2) weak localization interaction The small two dimension modification of the low temperature resistance and the magnetoresistance have been predicted for earlier researches. In this letter, we found the three dimension electron-electron interaction for the studies of the low temperature resistance and found that it is corresponded the predictions of others. Beside these, we also found that the relation of Δρ/√T and ρ is power of 2.5