Abstract
In this experiment, InSb thin film with 20nm grain size was deposited by thermal evaporation. InSb phase transition form zincblende to wurtzite by applying tensile or compress strain on 3.5% was observed by In-Situ Raman spectrum. The zincblende Insb TO vibration mode will partially change to wurtzite InSb E2 mode. It is anirreversible phase transition process. The polyethylene oxide (PEO) was dropped to be InSb thin film gate dielectric material, and I-V curve was measured with different gate bias. According to experiment result, the electron mobility of n-type InSb thin film is 12000 cm2V−1s−1. Tensile/compress strain also was applied to InSb thin film, in order to enhance the electron mobility by change the band structure with different strain.