Abstract
利用熱燈絲化學氣相沉積法成長高品質多晶鑽石膜。同步摻質源為硼酸水溶液經由氫氣帶入反應腔中。鋁/P-型多晶鑽石膜蕭基接面電性一般認為穩定且再現性高，但發現並非如此。鋁/P-型多晶鑽石膜蕭基接面電壓來回掃瞄時，在正偏壓和負偏壓區產生特有遲滯曲線，迴圈面積將隨電壓掃瞄速度變快或高溫中而變大，此將嚴重影響多晶鑽石電子元件應用。本論文利用流-電壓-溫度、接面電容量測技術分析鋁/P-型多晶鑽石蕭基接點行為，並提出一高密度深層能階模型解釋此遲滯曲線現象。本論文共分六章，分別如下：第一章 緒論，第二章 實驗方法，第三章 鋁/P-型多晶鑽石膜蕭基接點電流-電壓-溫度特性分析，第四章 鋁/P-型多晶鑽石膜蕭基接面電容特性，第五章 鋁/P-型多晶鑽石膜蕭基接點遲滯曲線特性分析，第六章 結論。Boron doped polycrystalline diamond films of high quality werein-situ grown in a hot-filament chemical vapor depositionchamber, using boric acid as the doping source. The current-voltage characteristic of the Al/p-polycrystalline diamondSchottky contact had peculiar hysteresis loop in either forwardor reverse bias region. The hysteresis loop became larger whenthe bias voltage was scanned with a higher speed or at highertemperature. In this thesis, we used current- voltage-temperature and junction capacitance technology to understandthe behavior of Al/p-polycrystalline diamond Schottky contact.Deep levels of high density were proposed to be the fundamentalphysical reason in explaining the formation of hysteresisloop. This thesis contains six chapters. The outline is asfollows: chapter 1 is "introduction", chapter 2 is "Experiment procedures", chapter 3 is "Current- voltage-temperature characteristic of Al/p-polycrystalline diamondSchottky diode, chapter 4 is "Junction capacitance behavior ofAl/p-polycrystalline diamond Schottky contact", chapter 5 is"Hysteresis loop characteristic of Al/p- polystalline Schottkydiode" and chapter 6 is "Conclusion".