Abstract
There are two approches to enhance the resistive switching behavior in ZnO-based RRAM. One is trying to improve the resistive switching characteristics through the nanorods-limited geometry in ZnO-based RRAM devices. The other is trying to adjust concentration of dopant, Mn, which would increase the operative resistance window as the concentration increases. In addition, the higher resistance ratio, the faster programming speed properties of RRAM are suitable for development as a high-density memory.First of all, Mn-doped ZnO nanorods can be controlled growth successfully with different diameter and aspect ratio by hydrothermal method. We analyzed the surface morphology, crystalline structure and the composition of Mn-doped ZnO nanorods by SEM, XRD, TEM, EDX, and PL.We measured resistive switching behaviors of the Mn-doped ZnO nanorods by Keithley 4200. The resistive switching characteristics were observed and fell into three categories. First, different resistive switching behaviors can be observed in different types of devices, undoped and Mn-doped ZnO nanorods. Second, the resistive switching characteristics can be modified by different contents of Mn and different lengthes of ZnO nanrods. Furthermore, multistate memory effects could be manipulated by applying different current compliance in the device.