Abstract
Abstract The characteristics of Ternary alloy thin film which co-deposite by Gesb9 binary alloy target and Te target were reported. In our study, We controlled doped Te concentration of the ternary alloys below 8at%. The TEM results showed that a bimodal size distribution occurred. When we add Te in the Gesb9 binary alloy，We have found six-fold grain formed. Between two six-fold grain, there are some small size grain. The grains will become more when We add higher Te doped concentration. The grain size of six-fold grain is 200~500nm, and small size grain is 50~150nm. The X-ray diffraction results showed that all of the film we deposited only had Sb phase diffraction peaks. The results of DSC(Differential scanning calorimeter) showed the film in our experiments had crystallization temperature range between 185.3℃~188.3℃ and its crystallization activation energy were 3.9eV~5.22eV.It showed doping Te in our thin film will decreased its crystallization temperature and crystallization activation energy. In our study, We observed that the more Te we added, the lower reflection we got. But we would get better reflection contrasts. In n、k analyzer, doping Te will increased n and k values in both as-deposited films and annealed films.