Abstract
This study is to observe effects of chromium and vanadium element doping on the microstructures and physical properties of germanium- antimony alloy films. All films, CrX（GeSb9）1-X （X≦15.5at.%）and（GeSb9）1-XVX（X≦6.7at.%）, were deposited with DC magnetron sputtering. Transmission electron microscopy （TEM）observation implied that the grain sizes reduced with the Cr and V concentration. X-ray diffraction was applied to identify phases of the films, and only diffraction peaks of Sb were observed within sensitivity of instrument. In addition, the diffraction peaks intensity decreased with Cr and V concentration. The crystallization temperatures are between 200~220oC, the crystallization temperatures raised with Cr and V concentration, but decreased with the Cr concentration as more Cr doping. The crystallization activation energy between 2.4~3.96 eV raised after doping Cr and V. At short wavelengths（420nm and 460nm）, the optical reflection contrasts of almost samples are higher than 15﹪,in which, GeSb9+Cr*2(Cr1.2Ge9.2Sb89.6) is higher than 25%.