Abstract
Using RF magnetism sputtering deposited LaNiO3( LNO ) thin film on Si substrate . X-ray diffraction, Inductively couple plasma-Mass and Four-point probe measurement were used to determine the film as Text with LaNiO3 and LaNiO3-δ . We present electronic property of the contact with LNO and Al was Thermionic emission ; the barrier high was 0.15 eV ; Richardson constant was very low and lower with thickness of the contact . This result illustrates localization scaling effect . At last, the photovoltage was observed when our sample be illuminated .