Abstract
The reaction between Ti-Ni alloy thin film and (100) Silicon has been characterized by Field Emission Gun-Transmission Electron Microscope. The islands of epitaxial NiSi2 are formed after 400℃-30 min. annealing. Ternary silicide start to form at 600℃ annealing and grow into continuous film at 800℃ annealing coexist with Continuous NiSi2 laryer. NiSi is found to be the most stable phase at 600℃ annealing, the formation of NiSi2 at initial stage of 600℃ annealing is dominated by dynamical condition, by prolonged annealing time all NiSi2 convert into NiSi at condition of with extra Nickel atom supplied.