Abstract
The purpose of this study is to produce the diamond tip arrays composite vertical few-layer graphite with high field emission effect. Because of its lower energy cost and high power advantages. It can be applied to thin the panel or make better cooling components. The diamond tip arrays with octagonal cone are formed by microwave plasma enhanced chemical vapor deposition (MPCVD) on silicon. Through the diamond and vertical few-layer graphite deposition, change the amount of nitrogen which leads to improve the diamond tip field emission. The diamond tip arrays and vertical few-layer graphite morphology are examined by Raman spectroscopy and scanning electron microscopy (SEM), respectively. The field emission effect with different diamond composite vertical few-layer graphite arrays are examined by field emission meter. The research first proposed the diamond tip composite vertical few-layer graphite structure with novel octagonal cone array to improve the field emission effect and lifetime because of the high pitch height ratio of vertical few-layer graphite and the high stability of diamond. The microcrystalline and ultrananocrystalline diamond are growth in this research. Besides, the staggered arrangement of vertical few-layer graphite and the diamond structure growth inside the vertical graphite flake is different from previous studies. In this study, the diamond tip arrays composite vertical few-layer graphite growth by N2/H2/CH4 = 40/80/20 shows good filed emission stability and high field emission characteristics with low turn-on field of 2.60 V/μm and field enhancement factor of 1921.