Abstract
Plasma whichs adding additional energy on gas decomposes gas molecules being ionized. Ions are accelerated and produce ion bombardment by adding an applied electric field. Ion bombardment have an important influence in the semiconductor manufacturing process. On the sputtering process, atoms on the target can be stroken by ion bombardment in plasma, and then deposited on the substrate by sputter. In the etching process, we can remove non-volatile residue eliminations by ion bombardment. In the coating process, however, the effect of ion bombardment will make surface defect to cause nonuniformity coating quality. In my study, I add a mesh which grounds in the middle of parallel electrode plates to reduce the ion flux to substrate and decrease ion bombardment by CCP. The purpose of this study is to investigate the argon/hydrogen plasma discharge for atomic layer deposition process. This plasma simulation using 2D-fluid model Included 8 reactive particles and 35 reactions. When using different pressure, the change of the H radical flux. This is main part of this study is simulation. In simulation studies, RF plasma was operated at 13.56 MHz. The electron density, electron temperature, and H number density were reached to steady state after 0.2 second. The plasma potential near two electrodes will accelerate electron and ions. There are three pressures of the simulation, changing different total pressure (400Pa、300Pa、200Pa) of the simulation. The simulation results show the pressure increasing, cause electron temperature and average potential increasing. It’s worth to mention. This case electron density is reversed. Pressure increases as the electron density increases in top chamber. Pressure increases as the electron density decrease in bottom chamber. H radicals flux are also increase when power increase. Representative more precursors reacted with the active radicals, so that the uniformity of the films can be improved. But relative to other ion flux increase, it means the ion bombardment effect increases. There is another simulation which is changing input gas ratio of H2/Ar. The simulation result is that the ratio of H2/Ar increase the H radicals flux increase. In this simulation study, if we want to let the films more uniform, in addition to increasing H radicals flux but also need to consider the ion bombardment. So it should be find an optimum balance. This study constructs a CCP system in order to create H2/Ar plasma discharge. During H2/Ar plasma discharge, Optical Emission Spectroscopy can record plasma spectrum. Those plasma spectrums are used to understand reactive particles feature.