Abstract
In this thesis, we discuss on the top electrode effect, current conduction mechanism and annealing effect for the HfO2 based RRAM. At the discussion of the top electrode effect, the W top electrode causes the device to present unipolar operation, but in the W/Ti top electrode present bipolar operation. We may know that top electrode influence the switching characteristic and the polarity of RRAM seriously. Second, the W/Ti/HfO2/TiN device in LRS is the ohmic conduction, but when HRS, the low voltage region (＜0.05V) is the ohmic conduction, the high voltage region (＞0.1V) is Poole-Frenkel emission. Finally, in the annealing effect, the suitable temperature condition to obtain the 10 times of promotion in endurance. From the result of the annealing effect, we can provide a method to improve endurance and have the development potential.