Abstract
This thesis contains two parts. First, electron beam resist properties and resist flow processes are studied. Above all, we use electron beam to define resist pattern, and compare E-beam resist (DSE1010) and DUV resist (UV135) for electron beam lithographic applications. Effects of glass transfer temperature、resist flow time、resist flow temperature and duty ratio conditions are studied in resist flow technology.Second part of this thesis is about deep sub-micron metal silicided gate. Increasing the requirement of resolution, the ultra thin resist technology is important. In ultra thin resist technology, high etch resistance of resist is required. To overcome this problem, we attempt composite carbon nanoparticle with resist, it is called resist modified method.As device into deep sub-micron generation, gate length scaling down, metal silicided thermal reliability, and narrow line effects affect gate sheet resistance seriously. We compare cobalt silicided and nickel silicided in gate properties for accurate measurement results. We study sheet resistance reliability. Compared with capping layer effects affect in silicided sheet resistance. Because of the narrow line effect, cobalt silicided will replace by nickel silicided. And we can obtain ultra low nickel silicided gate sheet resistance due to narrow line edge effect. Nickel silicided manufacture will be the candidate for deep sub-micron device material.