Abstract
本論文的主旨，在探討基本製程參數對複晶碳化矽低溫成長之影響。包括微波能量之於電漿組態的變化，氣相成份之於晶粒的影響，及基材表面對碳化矽成長的影響，並嘗試磷和硼摻雜碳化矽薄膜的成長與乾蝕刻的製程。本研究中碳化矽成長主要是利用電子迴旋共振式化學氣相沉積法，以達到低溫製程的目地；反應氣體是矽烷和甲烷，傳輸氣體為氫氣和氬氣，並以矽或二氧化矽為基材。碳化矽成長之反應氣相成份分析是使用殘氣質譜分析和發射光譜分析，而薄膜結構分析則使用穿透式電子顯微鏡分析。本研究亦探討基材界面對於薄膜成長的影響，重點在於成長碳化矽之前，將基材表面碳化或先長成份過渡層。表面碳化和成份過渡層分別用表面 X光電子光譜分析和歐傑縱深成份分析，所成長的薄膜用穿透式電子顯微鏡和高解像電子顯微鏡探討。最後嘗試一 P/N接面結構之製作，以了解用電子迴旋共振化學氣相沉積法所成長的碳化矽薄膜的一些電性，摻雜膜的成長與乾蝕刻的製程。Polycrystalline SiC can be grown on Si and on SiO2 substratesat 200℃ with SiH4/CH4/H2/Ar gas mixtures by ECR-CVD. The trendof growth rates with respect to the MW power is similar to thatof using SiH4/CH4/H2 gas mixtures. SiC growth by ECR-CVD seemsto be insensitive to the subs- trate surface, but sensitve tothe gas phase condition. The re- sults of SiC deposition on Siand SiO2 substrates are similar. The surface carbonization andgradient composition buffers show no effects on the SiC grainsizes. Surface carbonization prior to SiC deposition can reduceSi substrate damages and eliminate amorphous interlayer betweenthe poly-SiC film and Si substrate. And the carbonization stepalso prevents the effect of phosphine segregation on the Sisurface. The trial of the p/n diode, which is fabricated by thegrowth of in-situ doped-SiC by ECR-CVD, still yield a poor I-Vcharacte- ristics. The problems of ohmic contact formation,dopant activa- tion and crystallinity improvement of the doped-SiC films should be solved further.