Abstract
in the experiment,our purpose was to grow copper thin films using plasma immersion ion implantation and electroless copper systems.First,we implanted catalyst layer,such as Pd,Cu etc,using plasma immersion ion implantation in large areas uniformly to enhance adhesion.In the experiments,according to the results of changing different parameters and annealing at different temperature to influence Cu thin films properties,define the correct Cu growth mechanism.Analyze the relation between Cu thin films and TaN layer using different kinds of analysis tools,such as AES,XRD etc.The best gap filling can fill the trenches and vias which aspect ratio is 1:7 and reveal good step coverage.