Abstract
`In this thesis, nitridation on floating gate of nonvolatile memory devices is used to improve tunneling oxide quality and reliability. Samples, nitridized by NH3 with additional N2O annealing on poly-oxynitride (poly I) and then deposited with a CVD TEOS and a post deposition RTA N2O annealing, show excellent electrical properties in term of electric breakdown field, charge to breakdown, low electron trapping rate, and reliability characteristics. In addition, the CVD TEOS oxide deposited on the phosphorus in-situ doped polysilicon nitrided with NH3 and followed with an N2O RTA treatment shows better performance inter-dielectric than control samples. This structure is a very promise for the interpoly dielectric of EEPROM and flash memory devices.