Abstract
本論文主要是製作非晶矽鍺近紅外線偵測器.論文分為兩大部份:第一 為非晶矽鍺薄膜的製作,第二為近紅外線偵測器的製作. 非晶矽鍺薄膜 的製成採用氫氣稀釋(稀釋比率約93 %)及脈衝式電漿方法製作.從 一系列 製作單層膜試片中,選取能隙低及光暗電導率高的試片作為元件的紅外光 吸收層. 非晶矽鍺紅外光偵測器的結構採用能障型光電晶體,光入射的 第一層I為可見光吸收區,第二層I為紅外光吸收區.此元件在780nm LED照 射下外加1伏負偏壓光暗電導比有148,而且光電流值大於1uA,此元件可以 用來製作紅外光光偵測器. The purpose of this thesis is to fabricate a-SiGe:H IR detectors. Two mainefforts of this thesis are (1)fabrication of a-SiGe:H films. (2)NIPIN IR photodetectors. In order to reduce the influence of the particulate formation in thepreparation of a-SiGe:H films, high hydrogen dilution ratio which is about93 % and pulse RF power is used for a-SiGe:H films. The particulate formationis decreased by using pulse RF power. The device structure of a-SiGe:H photo detector is NIPIN barrier type phototransistor. The I layer which light is first incident is the visible lightabsorption region and the other is the IR light absorption region.The photo to dark current ratios of this device under 780 nm LED illumination is over 100 and the photocurrent is over 1 uA which is enough for the requirement for the circuit design.