Abstract
Currently, the industry of semiconductor uses double-pattering and immersion lithography technique to achieve 22 nm manufacturing process. But according to its fundamental optical and material characteristics limitation, this two manufacturing process will face their bottleneck soon. In the same time, researchers put more focus on many kinds of soft devices. From this ground, this thesis presented a method that applying strain on flexible substrate then doing photolithography to reduce linewidth. The experiment results proved that pattern can be successively reduced without changing any lithography equipment and material which existing now. It could have 16.7% and 28.6% linewidth reducing respectively when applying 20% and 40% strain.