Abstract
In this thesis, we focus on the design and process of 4H-SiC RF MOSFETs on a semi-insulating substrate, including e-beam lithography for submicron gate length, low sheet resistance source/drain implantation and activation, and non-annealed ohmic contact. The observed sheet resistance in the phosphorus implanted Source/Drain is 207.5 (Ω/square). Non-annealed contact resistance is 2.4x10-5(Ωcm2).The achieved mobility of no contact annealing MOSFET is 63 cm2/Vs. The fabrication sequences of the 4H-SiC RF MOSFETs on semi-insulating substrate with different device structures such as buried channel to avoid low surface mobility, and lightly doped drift region to increase operating voltage is demonstrated.