Abstract
This paper presents SPICE parameters extraction of LDMOSEFT and examines its compatibility through circuit simulation. The device I-V, C-V characteristics are measured between 25。C and 150。C. A model parameter extraction program (BSIMPro) is used to extract DC, AC parameters and temperature dependence of the power device. Integration of the LDMOSFET structure into a tsmc 0.6µm technology for over-current protection circuit with different temperature is simulated. Finally the consequences of these results on the design and performance for high-temperature applications are discussed.