Abstract
In this research, AlGaN/GaN high electron mobility transistors were fabricated on a silicon substrate. Isolation between devices was achieved by multi-energy Zn implantation, significantly suppressing the leakage current within and between devices. The on/off current ratio for the device with 3μm Lch and 7μm LGD is 6.2×106 and the subthreshold slope is 112 mV/dec. Gate field plates were applied in order to obtain high breakdown voltages. Measurements show that, for the device with 3μm Lch, 40μm LGD, and 2μm gate field plate, the maximum breakdown voltage is around 2300 V, while the on-resistance is 14.8mΩ-cm2. The BFOM is 372.8M W/ cm2 for this device. For the device with the highest BFOM of 664MW/cm2, the breakdown voltage is 1609 V and the on-resistance is 3.9 mΩ．cm2. The channel length is 3μm, the gate to drain spacing is 20μm, and the gate field plate is 2μm.