Abstract
本研究係利用穿透式電子顯微鏡從正面和棋截面來觀察高溫金屬和矽晶之間的反應情形，同時也利用歐傑電子分析儀來偵測金屬膜中雜質的含量以及反應時界面成份的變。化在本論文中的研究大玫可分為三大部分：(一)高溫金屬矽化物的生成與成長對佈植射程末端缺陷之消除,(二)矽晶中佈植雜質(如磷、砷、硼和氟化硼)的存在對鉬金屬矽弋物生成之影響，以及(三)高溫金屬與矽單晶界面非晶質夾層之形成與成長。在本研究中發現高溫金屬矽化物晶粒成長時所出之空孔對於佈植射程末端之缺陷的消除具有相當顯著的效果,同時亦發現P型雜質佈植之缺陷較n型者難消除，其間的差別也被加以探討。佈植雜質的存在對於鉬金屬矽化物的生成有相當顯著的影響，其可促進矽化物晶粒的成長，可使矽化物和矽晶界面變得平夬整，同時可提升高溫時矽化物在矽晶表面的覆其蓋率，此外磷的存在對於鉬金屬矽化物的磊晶成長也有相當的促進作用。非晶質夾層的形成在高溫金屬和矽晶的界面均被發現，而且它們均具有相似的成長行為，它們之間的相異點，如非晶質夾層成長的最大厚度，活化能，熱穩定性以及非及非晶質形成的條件等在本論文中亦被詳加探討。///////Interfacial reactions of refractory metal thin films on blank andion-implanted Si have been studied by both cross-sectional and planviewtransmission electron microscopy as well as Auger electron spectroscopy.The presence of As+, P+, BF★in the (111) Si substrate was found to bevery effective in improving the qualities, such as grain size, sufacecoverage of silicide on Si and interfacial morphology, of MoSi★ was foundas a result of P+ implantation. B+ implantation, on the other hand, wasnot very effective in promoting the growth of MoSi★ epitaxy on Si. Theresults suggested that the modification of interfacial energy by thepresence of dopants leads to the improvement in the formation of MoSi★epitaxy.Complete removal of end-of-range defects in ion implanted silicon has beenachieved by the formation and growth of refractory silicides (VSi★,TaSi★, MoSi★,ZrSi★ and NbSi★). Continued generation of vacanciesduring the silicide growth was found to be essential to reduce the EORdefects. The results are consistent with suggestion of the presence of arecombination barrier between vacancies and interstitial defects. Theeffects of the change in charged state, induced by doping species, ofdefects on the elimination of EOR defects are also discussed.Formation and growth of amorphous interlayers (a-interlayer) in ninerefractroy metal and silicon systems by solid-state diffusion have beeninvestigated. The amorphous interlayers were found to form in samplesannealed at 350-650℃. The growth was found to follow a linear growth lawinitially then slow down until a critical thickness was reached. Theinterface structures were examined. The correlations among difference inatomic size between metal and Si atoms, growth rate and activation energyof the linear growth, critical and maximum a-interlayer thickness, thelargest leat of formation energy for crystalline silicides, the calculatedfree energy difference in forming amorphous phase as well as atomicmobility in refractroy metal/silicon systems are discussed.