Abstract
With the explosive development of web applications and information industry, the increasing demands of transmission bandwidth for the various social networks, and the explosive of data transmission and processing, the demand of transmission speed in communication systems has grown rapidly recently. One recent specification targets the transmission speed up to 4×25Gb/s. The optical communication front end module includes optoelectronics deivces, ampilfier and connector, so that the signal can be transmitted by light. In chapter 2, we build the equivalent circuit models of optoelectronics device such as photo detector and laser diode. Modeling of of these components are of extreme importance for high frequency applications. We perform system level simulation for the front end module in ADS. In chapter 3, we focus on the integration and characterization of the photo detectors (PDs) with transimpedance amplifiers with two different topologies. The first one adopts a modified regulated cascode (RGC) as input stage and the technique of reversed triple resonance network (RTRN) for bandwidth enhancement thus it can operate at low supply voltage. The second design uses a common-gate configuration as input stage and the technique of RTRN. The measured electrical eye diagrams can be up to 40Gb/s and the optical eye diagram can be up to 20Gb/s. We also integrate and characterize a laser diode driver with the laser diode. The driver adpots totem pole output stage and asymmetric inductors. The totem pole configuration can easily transfer the differential singal to single ended. With the proposed asymmetric inductors, both singal paths will have a similar gain leading to a good characteristic of eye diagram. The electrical eye diagram can up to 32Gb/s. The driver wirebond with the driver and the measured optical to electrical eye diagram can be up to 12.5 Gb/s. In chapter 4, we propose two topologies of differential modulator drivers for silicon modulator. The first one adopts cascode stage distributed amplifier which have large bandwidth and high output voltage swing. The second adopts resister feedback cascode stage distributed amplifier to prevent transistors from breakdown. The modulator driver reachs 4V with an operation speed of 40Gb/s. In chapter 5, the conclusions are given with the recommendation of future works.