摘要
A new two-Transistor logic resistive random-Access memory (RRAM) cell with a 16-nm standard FinFET CMOS logic platform that is fully compatible with the CMOS process is proposed and demonstrated in a 1-kb FinFET dielectric RRAM (FIND RRAM) array. The new 16-nm FIND RRAM comprises two logic standard FinFET transistors with a HfO 2 -based composite resistive gate dielectric film as the storage node in a cell. The set and reset characteristics of the FIND RRAM are largely improved by the locally enhanced field at fin corners, which results in low set voltage and low reset current in array operations. Due to adoption of a FinFET CMOS logic process without any additional masks or processing steps, FIND RRAM can be scaled aggressively with a cell size of 288~ ext {nm} imes 265 nm. Low-voltage operation, excellent reliability, and stable low-resistance state/high-resistance state window are realized with the set and reset procedures based on the incremental step pulse programming algorithm, making FIND RRAM a promising embedded nonvolatile memory in the FinFET era.