Abstract
The authors report the fabrication of high-performance planar InGaAs P-I-N buried heterostructure photodetectors (BH-PDs) by introducing mesa etching and refilling with semi-insulating InP. It was found that measured 3-dB bandwidth for the fabricated BH-PD was 12.4 GHz. For a given bandwidth of 1 kHz and a given bias of - 5 V, it was found that noise equivalent powers our InGaAs P-I-N BH-PD were 6.05 × 10 -14 W at 1310 nm and 4.36 × 10 -14 W at 1550 nm, which correspond to normalize detectivity (D *) values of 2.3 × 10 12 cmHz 0.5W -1 and 3.2 × 10 12 cmHz 0.5 W -1 , respectively. It was also found that eye diagram data measured from the proposed BH-PD met with the requirements of the OC-192 standard. © 2010 IEEE.