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1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication
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1.3 GHz E-O bandwidth GaN-based micro-LED for multi-gigabit visible light communication

Lei Wang, Zixian Wei, Chien-Ju Chen, Lai Wang, H.Y. Fu, Li Zhang, Kai-Chia Chen, Meng-Chyi Wu, Yuhan Dong, Zhibiao Hao, …
Photonics Research, 卷.9(5), 頁碼.792-802
05/2021

摘要

Electronic Optical and Magnetic Materials Atomic and Molecular Physics and Optics
The data rate of a visible light communication (VLC) system is basically determined by the electrical-to-optical (E-O) bandwidth of its light-emitting diode (LED) source. In order to break through the intrinsic limitation of the carrier recombination rate on E-O bandwidth in conventional c-plane LEDs based on InGaN quantum wells, a blue micro-LED with an active region of nano-structured InGaN wetting layer is designed, fabricated, and packaged to realize a high-speed VLC system. The E-O bandwidth of the micro-LED can reach up to 1.3 GHz. Based on this high-speed micro-LED, we demonstrated a data rate of 2 Gbps with a bit error rate (BER) of 1.2 × 10− 3 with simple on-off keying signal for a 3-m real-time VLC. In addition, a 4-Gbps VLC system using quadrature phase shift keying-orthogonal frequency-division multiplexing with a BER of 3.2 × 10− 3 is also achieved for the same scenario. Among all the point-to-point VLC systems based on a single-pixel LED, this work has the highest distance-bandwidth product of 3 GHz·m and the highest distance-rate product of 12 Gbps·m.

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