18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal- Shaped Multi-Finger Structure

期刊文章

同儕審查

Yu-Jun Lai, Dian-Ying Wu, Ya-Han Yang, Yu-Chen Liu, Cheng-Yeu Wu 和孟奇吳

ECS Journal of Solid State Science and Technology, 卷.13

22/07/2024

摘要

GaN;HEMT;Multi-Finger Structure

1 檢視次數

題名: 18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal- Shaped Multi-Finger Structure
創作者：: Yu-Jun Lai (作者) - National Tsing Hua University
Dian-Ying Wu (作者) - National Tsing Hua University
Ya-Han Yang (作者) - National Tsing Hua University
Yu-Chen Liu (作者)
Cheng-Yeu Wu (作者)
孟奇吳 (作者)
學術資源類型: 期刊文章
出版日期: 22/07/2024
出版資訊: ECS Journal of Solid State Science and Technology, 卷.13
語言: 英語