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2-V 10.7-MHz CMOS limiting amplifier/RSSI
Journal article   Peer reviewed

2-V 10.7-MHz CMOS limiting amplifier/RSSI

Po-Chiun Huang, Yi-Huei Chen and Chorng-Kuang Wang
IEEE Journal of Solid-State Circuits, Vol.35(10), pp.1474-1480
10/2000

Abstract

This paper presents low-voltage low-power CMOS circuit design techniques for an intermediate frequency (IF) limiting amplifier and received signal strength indicator (RSSI). The architecture of the limiting amplifier and RSSI employed is determined by the optimal power consumption for a specified speed, overall gain, and accuracy. Each gain cell of the limiting amplifier employs folded diode load for low-voltage operation. Offset is reduced by a cross-connected source-coupled pair offset subtractor that is along the signal path. Full-wave current rectification and summation are employed in the RSSI circuit to achieve high precision while maintaining voltage and low power. Using a single 2-V supply voltage, measured results demonstrate the input dynamic range is larger than 75 dB for 10.7-MHz IF application. The prototype occupies an active area of 0.4 mm 2 using a 0.6-μm digital CMOS technology. The power dissipation is 6.2 mW.

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