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2DHG in AlGaN Back-Barrier for Substrate Loss Suppression and RF Performance Enhancement in GaN-on-Si HEMTs
期刊文章

2DHG in AlGaN Back-Barrier for Substrate Loss Suppression and RF Performance Enhancement in GaN-on-Si HEMTs

Roy King-Yuen Wong
IEEE Electron Device Letters, 卷.pp. 1313-1316
08/2025

摘要

Two dimensional hole gas , Substrates;Wide band gap semiconductors , Aluminum gallium ni

相關連結

指標

1 檢視次數

詳細資料

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